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Imikhiqizo

Ukuphinda kugaywe kabusha okuphezulu kwe-Blasting Media bonke osayizi be-silicon carbide eluhlaza okompushana i-gsic yokupholisha nokugaya Isithombe Esifakiwe
  • Ukuphinda kugaywe kabusha okuphezulu kwe-Blasting Media bonke osayizi be-silicon carbide eyimpushana ecolekile i-gsic yokupholisha nokugaya
  • Ukuphinda kugaywe kabusha okuphezulu kwe-Blasting Media bonke osayizi be-silicon carbide eyimpushana ecolekile i-gsic yokupholisha nokugaya
  • Ukuphinda kugaywe kabusha okuphezulu kwe-Blasting Media bonke osayizi be-silicon carbide eyimpushana ecolekile i-gsic yokupholisha nokugaya
  • Ukuphinda kugaywe kabusha okuphezulu kwe-Blasting Media bonke osayizi be-silicon carbide eyimpushana ecolekile i-gsic yokupholisha nokugaya

Ukuphinda kugaywe kabusha okuphezulu kwe-Blasting Media bonke osayizi be-silicon carbide eyimpushana ecolekile i-gsic yokupholisha nokugaya


  • Umbala :Okuhlaza
  • Okuqukethwe:>98%
  • Amaminerali Ayisisekelo:I-α-SiC
  • Ifomu le-Crystal:Ikristalu ene-hexagonal
  • Ukuqina kwe-Mohs:3300kg/mm3
  • Ukuminyana kwangempela:3.2g/mm
  • Ukuminyana kwenqwaba:1.2-1.6g/mm3
  • Amandla adonsela phansi athize:3.20-3.25
    • Landa njenge-PDF

    Imininingwane Yomkhiqizo

    ISICELO

    Isingeniso Se-Green Silicon Carbide

    I-silicon carbide powder eluhlaza iyisisetshenziswa sekhwalithi ephezulu e-brasive esetshenziselwa izinhlelo zokusebenza ezahlukahlukene njengokupholisha nokuqhunyiswa kwesihlabathi. Yaziwa ngobulukhuni bayo obuhle kakhulu, ikhono lokusika elihlaba umxhwele, namandla aphakeme. I-silicon carbide eluhlaza ikhiqizwa ngokushisisa ingxube yesihlabathi se-silica nekhabhoni emazingeni okushisa aphezulu esithandweni sikagesi. Umphumela uba yi-crystalline material enombala omuhle oluhlaza.

    imvelo (58)
    imvelo (52)
    i-gsic (6)

    I-Green Silicon Carbide Physical Property

     

    Impahla ebonakalayo
    Isimo se-Crystal I-Hexagonal
    Ukuminyana ngobuningi 1.55-1.20g/cm3
    Ukuminyana okusanhlamvu 3.90g/cm3
    Mohs Ukuqina 9.5
    Ukuqina kweKnoop 3100-3400 Kg/mm2
    Shatter amandla 5800 kPa·cm-2
    Umbala Okuhlaza
    Iphoyinti lokuncibilika 2730ºC
    I-Thermal conductivity (6.28-9.63)W·m-1·K-1
    Umugqa wokunweba i-coefficient (4 - 4.5)*10-6K-1(0 - 1600 C)
    Usayizi Ukusabalalisa okusanhlamvu Ukwakhiwa Kwekhemikhali(%)
      D0 ≤ D3 ≤ D50 I-D94 ≥ I-SiC ≥ FC ≤ I-Fe2O3≤
    #700 38 30 17±0.5 12.5 99.00 0.15 0.15
    #800 33 25 14±0.4 9.8 99.00 0.15 0.15
    #1000 28 20 11.5±0.3 8.0 98.50 0.25 0.20
    #1200 24 17 9.5±0.3 6.0 98.50 0.25 0.20
    #1500 21 14 8.0±0.3 5.0 98.00 0.35 0.30
    #2000 17 12 6.7±0.3 4.5 98.00 0.35 0.30
    #2500 14 10 5.5±0.3 3.5 97.70 0.35 0.33
    #3000 11 8 4.0±0.3 2.5 97.70 0.35 0.33

     

  • Okwedlule:
  • Olandelayo:
    1. Ukugaya kanye Nokusika: ukunemba ukugaya izinsimbi eziqinile, izinto zobumba, nengilazi
    2. Ukulola nokucija: ukulola nokucija amathuluzi okusika anjengemimese, amashizolo, nezindwani
    3. I-Abrasive Blasting: ukulungiswa kwendawo, ukuhlanza, nokufaka izinhlelo zokusebenza
    4. Ukupholisha kanye nokuLap: ukupholishwa okunembayo kwamalensi, izibuko, nokupholishwa kwe-wafer ye-semiconductor
    5. I-Wire Sawing: ama-wafers e-silicon, amatshe ayigugu, nezitsha zobumba
    6. Imboni ye-Refractory kanye ne-Ceramic: izinsimbi zokukhiqiza, ifenisha yomlilo, nezinye izinto ezisezingeni eliphezulu lokushisa
    7. Imboni yeSemiconductor:
    8. Izicelo Metallurgical

     

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