Impuphu ye-ceramic ye-silicon carbide eyi-cubic iyimpuphu eluhlaza okwesibhakabhaka. Ifomula yayo yama-molecule yamakhemikhali yile: i-SiC, isisindo sama-molecule esingu-40.10, ubuningi obungu-3.2g/cm3, iphuzu lokuncibilika elingu-2973℃, i-thermal expansion coefficient engu-2.98×10-6K-1.
Impuphu ye-ceramic ye-silicon carbide ihlanzekile kakhulu, ukusatshalaliswa kosayizi wezinhlayiya ezincane, ama-pores amancane, umsebenzi ophezulu wokuthulula, isakhiwo sekristalu esivamile, ukuqhuba kahle kokushisa, futhi iyi-semiconductor engamelana nokushiswa emazingeni okushisa aphezulu; Ama-whiskers e-β-SiC amade. Isilinganiso esikhulu sobubanzi, ukuphela okuphezulu kwendawo, isilinganiso sobubanzi obuphezulu, kanye nokuqukethwe okuphansi kwezinhlayiya kuma-whiskers, ukusebenza kwayo kungcono kunezinye kungakhathaliseki ukuthi icwiliswe endaweni egqwalisayo, izimboni ezihlukumezayo kakhulu kanye nezimayini, noma ivezwe emazingeni okushisa angaphezu kuka-1400°C. Ama-alloys e-ceramic noma ensimbi atholakala kwezentengiselwano, kufaka phakathi ama-alloys okushisa aphezulu kakhulu.
Imininingwane ye-Silicon Carbide:
| UmkhiqizoUhlobo | I-Silicon Carbide(β-SiCI-Grit) | I-Silicon Carbide (β-SiCImpuphu) | I-Silicon Carbide(α-SiC Impuphu) | |
| Okuqukethwe kwesigaba | ≥99% | β≥99% | ≥99% | |
| ukwakheka kwamakhemikhali (ubude%) | C | >30 | >30 | - |
| S | <0.12 | <0.12 | - | |
| P | <0.005 | <0.005 | - | |
| I-Fe2O3 | <0.01 | <0.01 | - | |
| Okusanhlamvu(μm) | Ukwenza ngokwezifiso | |||
| Umkhiqizo | I-Xinli Abrasive | |||
Ukusetshenziswa Okuyinhloko kwe-silicon carbide: I-Xinli Abrasive ingahlinzeka nge-silicon carbide yokusetshenziswa okuhlukahlukene, kufaka phakathi i-α-SiC enezinhlangothi eziyisithupha noma ezi-rhombohedral kanye nama-whiskers e-β-SiC ane-cubic kanye ne-β-SiC. Izinto ezihlanganisiwe ezakhiwe nge-silicon carbide kanye nepulasitiki, izinsimbi, kanye ne-ceramics zingathuthukisa kakhulu izakhiwo zayo ezahlukahlukene. Ngenxa yokuqina kwayo okuphezulu kokushisa, amandla aphezulu, kanye nokuqhuba kwayo okuphezulu kokushisa, isetshenziswa kabanzi ezintweni zamandla e-athomu, kumadivayisi amakhemikhali, ekucubungulweni kokushisa okuphezulu, kanye nezinto zikagesi neze-elekthronikhi. , insimu ye-semiconductor, izingxenye zokushisa zikagesi kanye nama-resistor, njll. Ingasetshenziswa futhi ezintweni ezi-abrasives, amathuluzi a-abrasive, izinto ezithuthukisiwe zokuphikisa, kanye ne-ceramics encane.
i-cubic silicon carbide inikeza izinhlelo zokusebenza ezahlukahlukene emikhakheni eminingi, ikakhulukazi kuma-elekthronikhi anamandla aphezulu, amadivayisi e-RF, ama-elekthronikhi anamandla, ama-substrate e-semiconductor, izindawo ezishisa kakhulu, izinzwa, kanye nama-optoelectronics.
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